PART |
Description |
Maker |
3-1640240-4 |
Matrix Series Ball Grid Array ( BGA ) Sockets; 2401 POSITION BGA SOCKET ASSEM ( Tyco Electronics )
|
Tyco Electronics
|
IBM25PPC740L-GB300A2R IBM25PPC740L-GB350A2R IBM25P |
32-BIT, 300 MHz, RISC PROCESSOR, CBGA255 21 X 21 MM, 1.27 MM PITCH, CERAMIC, BGA-255 32-BIT, 350 MHz, RISC PROCESSOR, CBGA255 21 X 21 MM, 1.27 MM PITCH, CERAMIC, BGA-255 32-BIT, 375 MHz, RISC PROCESSOR, CBGA255 21 X 21 MM, 1.27 MM PITCH, CERAMIC, BGA-255 32-BIT, 400 MHz, RISC PROCESSOR, CBGA255 21 X 21 MM, 1.27 MM PITCH, CERAMIC, BGA-255 32-BIT, 333 MHz, RISC PROCESSOR, CBGA255 21 X 21 MM, 1.27 MM PITCH, CERAMIC, BGA-255 32-BIT, 366 MHz, RISC PROCESSOR, CBGA360
|
Electronic Theatre Controls, Inc.
|
K7P401811M-HC160 K7P403611M-HC200 K7P403611M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet 128K X 36 STANDARD SRAM, 2.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Samsung Electronic
|
PC48F4400P0VT00A RC48F4400P0VT00A |
32M X 16 FLASH 1.8V PROM, 88 ns, PBGA64 LEAD FREE, BGA-64 32M X 16 FLASH 1.8V PROM, 88 ns, PBGA64 BGA-64
|
Intel, Corp.
|
FDZ294N |
N-Channel 2.5V Specified PowerTrench® BGA MOSFET N-CHANNEL 2.5 V SPECIFIED POWERTRENCH BGA MOSFET
|
Fairchild Semiconductor
|
MT49H8M32BM-4 MT49H8M32FM-4 |
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, LEAD FREE, MICRO, BGA-144 8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, MICRO, BGA-144
|
NEC, Corp.
|
IDT71V67613S200BQ IDT71V67613S183BG IDT71V67613S20 |
256K X 36 CACHE SRAM, 3.1 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165 256K X 36 CACHE SRAM, 3.3 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119 256K X 36 CACHE SRAM, 3.1 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 256K X 36 CACHE SRAM, 3.3 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 256K X 36 CACHE SRAM, 3.3 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165 256K X 36 CACHE SRAM, 3.1 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
|
Integrated Device Technology, Inc.
|
K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36 256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119 256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119 SENSOR DIFF VACUUM GAGE 1PSI SENSOR ABSOLUTE 0-15PSIA 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
IS61NVP51236-250B2I IS61NVP102418-250B2I IS61NVP10 |
512K X 36 ZBT SRAM, 2.6 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119 1M X 18 ZBT SRAM, 2.6 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119 1M X 18 ZBT SRAM, 3.1 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
|
Integrated Silicon Solution, Inc.
|
W9864G2DB-7 |
BGA SDRAM
|
Winbond Electronics
|
|